DOPING METHOD AND SEMICONDUCTOR ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a doping method that achieves shallow junctions of source and drain and has no scattering of element characteristics, and to provide a semiconductor element using the doping method. SOLUTION: By having either fullerene derivative molecules or metallocene molecules, having larger electron affinity or smaller ionization energy adhered to the surface of a semiconductor, charge transfer from the molecule to the semiconductor is induced, and doping of the semiconductor is carried out. COPYRIGHT: (C)2005,JPO&NCIPI