| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer for enabling gettering reliably even to a contaminated metal to which gettering is difficult while suppressing outward diffusion. SOLUTION: An epitaxial wafer 10 comprises: a semiconductor substrate 11 that is made of p-type single crystal silicon and has a bulk minute defect (BMD); and an epitaxial layer 12 in which p-type silicon is subjected to epitaxial growth on the mail surface of the semiconductor substrate 11. A first boron ion implantation layer 14, and a second boron ion implantation layer 15 in which boron is introduced at higher concentration as compared with impurity concentration in the semiconductor substrate 11, are provided in parallel on the main surface with a gap each other on the semiconductor substrate 11 near the main surface inside the semiconductor substrate 11. A third boron ion implantation layer 16 and a fourth boron ion implantation layer 17 in which boron is introduced at higher concentration than impurity concentration on the semiconductor substrate 11 are provided in parallel on the main surface with a gap each other even near a surface at the opposite side of the main surface. COPYRIGHT: (C)2005,JPO&NCIPI
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