METHOD FOR FORMING INTERCONNECT LINE USING DAMASCENE METHOD, AND COATING LIQUID FORMING SILICA BASED COATING FOR USE IN FORMATION OF INTERCONNECT LINE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an interconnect line by damascene method in which the interconnect line has mechanical strength suitable for damascene method and a fabricated integrated circuit exhibits excellent dielectric characteristics. SOLUTION: As an etching stopper layer 25 being provided between interconnect line forming layers 24 (interlayer insulating film layers) or a hard mask layer 23 for protecting the surface of the interconnect line forming layers 24, a silica based coating being formed using coating liquid containing a hydrolysis product of trialkoxy silane is employed. COPYRIGHT: (C)2005,JPO&NCIPI