| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device wherein, when performing a non-defective selecting test in the case of its shipping from a semiconductor factory, its cost-down is made possible by the contraction of its testing time. SOLUTION: The nonvolatile memory device 1 has a plurality of kinds of memory-cells. Each memory-cell portion has a source region 12, a base region 13, and a drain region 14 formed successively on the surface of a semiconductor substrate, a floating gate 17 formed thereabove via a gate insulation film and a tunnel insulation film 16a or via a gate insulation film and a tunnel insulation film 16b, and a control gate 19 formed thereabove via an interlayer insulation film. Further, the memory-cells have a first memory cell 2a wherein the area of its tunnel insulation film 16a contacted with its drain region 14 is made small and a second memory cell 2b wherein the area of its tunnel insulation film 16b contacted with its drain region 14 is made large. COPYRIGHT: (C)2005,JPO&NCIPI
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