| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that there is risk that a void may be generated by a groove between gate wirings on an element isolating film when embedding an insulating film, and that the gate wiring may be short-circuited via the void. SOLUTION: The method of manufacturing the semiconductor device includes an etching step of performing etching to form gate wiring on an element isolating film provided on a semiconductor substrate for separating semiconductor elements from each other on the semiconductor substrate, gate wiring adjacent to the gate wiring and side walls along with both the gate wirings. The method further includes a formation step of forming a nitride film, on a surface of the element isolating film between both the gate wirings, for preventing etching on the surface of the element isolating film between both the gate wirings in the etching step. COPYRIGHT: (C)2005,JPO&NCIPI
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