| 摘要 |
PROBLEM TO BE SOLVED: To obtain a magnetic random access memory in which the characteristic dispersion of each memory cell is suppressed. SOLUTION: A substrate 12 consisting of porous alumina having a plurality of fine holes 12a produced by anode oxidation over the whole surface is used. An electrode layer 21, an antiferromagnetic layer 22, a TMR layer 24 consisting of at least three layers, i.e. an insulator layer 31 and a pair of ferromagnetic layers 32, 33 holding the insulator layer 31 between them, and indicating a tunnel magnetic resistance effect, a buffer layer 25, and an electrode layer 26 which constitute a multilayer film 20, are successively laminated in each of the fine holes 12a formed on the substrate 12. A magnetic random access memory is formed by forming bit lines 15, word lines 16, MOSFETs (not shown in the figure) and other wires which are wired like a matrix on the upper and lower surfaces of the multilayer film 20, and the multilayer films 20 formed in respective fine holes 12a are used as memory cells. COPYRIGHT: (C)2005,JPO&NCIPI
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