发明名称 SEMICONDUCTOR DEVICE AND ITS FABRICATING PROCESS
摘要 PROBLEM TO BE SOLVED: To arrange a predetermined capacitance between power supplies in a chip even if core transistors are integrated with high density. SOLUTION: The semiconductor device comprises a plurality of core transistors 100 arranged in a chip, a plurality of I/O cells 10 arranged to surround the plurality of core transistors 100, power supply lines 12 and ground lines 14 of the plurality of core transistors 100, and capacitive element lines 42 and 44 for connecting the power supply lines 12 and the ground lines 14 such that at least one of dummy transistors, i.e. the transistors adjacent to the I/O cell 10 among the plurality of core transistors 100, functions as a capacitive element 200 between power supplies provided between the power supply line 12 and the ground line 14. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005175214(A) 申请公布日期 2005.06.30
申请号 JP20030413401 申请日期 2003.12.11
申请人 SEIKO EPSON CORP 发明人 IWASA YOSHIROU
分类号 H01L21/822;H01L21/82;H01L27/04;(IPC1-7):H01L21/822 主分类号 H01L21/822
代理机构 代理人
主权项
地址