| 摘要 |
A plasma processing device comprising a chamber ( 1 ) for accommodating therein a substrate ( 11 ), a high-frequency power supply ( 5 ) for generating microwave, and an antenna unit ( 3 ) for radiating microwave into the chamber ( 1 ). Microwave generated in the power supply ( 5 ) is sent to the antenna unit ( 3 ) via a waveguide ( 6 ). A top plate ( 4 ) forming part of a partition wall of the chamber ( 1 ) is formed at the upper portion of the chamber ( 1 ). A specified annular delay pass unit ( 2 ) formed of the same material as that of the top plate ( 4 ), for delaying the propagation of microwave, is provided on the outer peripheral portion of the top plate ( 4 ). Accordingly, the plasma processing device can restrict an abnormal discharge and the production of the foreign matters.
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