发明名称 |
Methods for planarizing a metal layer |
摘要 |
Methods for planarizing a metal layer in a semiconductor device are disclosed. An illustrated example method comprises dividing a metal layer into a first section and a second section. A polishing removal rate associated with the first section is greater than a polishing removal rate associated with the second section. The method also includes forming an oxide layer on the first section of the metal layer; and planarizing the oxide layer and the metal layer using a chemical mechanical polishing process.
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申请公布号 |
US2005142829(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040935662 |
申请日期 |
2004.09.07 |
申请人 |
LEE JOO-HYUN |
发明人 |
LEE JOO-HYUN |
分类号 |
H01L21/321;H01L21/44;H01L21/4763;H01L21/768;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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