Method for fabricating flash memory device

摘要

A flash memory device fabrication method is disclosed. A disclosed method comprises: depositing a first oxide layer on a substrate; depositing a first polysilicon layer on the first oxide layer; forming a second oxide layer on the entire surface of the first polysilicon layer; removing the second oxide layer; making the first polysilicon layer with an embossed shape by performing a heat treatment; depositing a dielectric layer on the top of the first polysilicon layer; depositing a second polysilicon layer on the entire surface of the dielectric layer; and removing some parts of the dielectric layer and the second polysilicon layer through a patterning process and an etching process.