发明名称 Nitride light emitting device and manufacturing method thereof
摘要 A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.
申请公布号 US2005139825(A1) 申请公布日期 2005.06.30
申请号 US20040002795 申请日期 2004.12.03
申请人 GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 SONG JUNE-O;SEONG TAE-YEON;LEEM DONG-SEOK
分类号 H01L29/10;H01L33/06;H01L33/32;H01L33/42;H01S5/00;(IPC1-7):H01L29/10 主分类号 H01L29/10
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