发明名称 Scribe street width reduction by deep trench and shallow saw cut
摘要 In a method to singulate a semiconductor wafer ( 100 ) into chips, trench streets ( 107 ) of predetermined depth ( 105 a) are formed across the first, active wafer surface ( 102 ) to define the outline of the chips ( 101 ). Thereafter, the fabrication of the active first wafer surface is completed and protected. Then, the wafer is flipped to expose the second wafer surface ( 103 ), and the wafer is subjected to a cutting saw. The saw is aligned with the trenches in the first surface so that the saw cuts the second surface along streets ( 106 ), which extend the trenches through the wafer. The saw is stopped cutting at a depth ( 105 b), when the saw streets just coalesce with the trench streets, respectively, whereby the chips are completely singulated.
申请公布号 US2005140030(A1) 申请公布日期 2005.06.30
申请号 US20050066380 申请日期 2005.02.25
申请人 HOWARD GREGORY E.;SWANSON LELAND S. 发明人 HOWARD GREGORY E.;SWANSON LELAND S.
分类号 H01L21/301;H01L21/304;H01L21/68;H01L21/78;H01L23/544;(IPC1-7):H01L21/301;H01L21/46 主分类号 H01L21/301
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