发明名称 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC
摘要 There is provided a photosensitive composition which possesses excellent storage stability and can yield an interlayer insulation film with an improved film thickness limit. The photosensitive composition comprises a modified polysilsesquiazane having a weight average molecular weight of 500 to 200,000 comprising basic constitutional units represented by formula -ÄSiR<1>(NR<2>)1.5Ü- wherein R<1>'s each independently represent an alkyl group having 1 to 3 carbon atoms or a substituted or unsubstituted phenyl group; R<2>'s each independently represent hydrogen, an alkyl group having 1 to 3 carbon atoms, or a substituted or unsubstituted phenyl group, up to 50% by mole of the basic constitutional units having been replaced by a linking group other than the silazane bond; and a photoacid generating agent.
申请公布号 EP1548499(A1) 申请公布日期 2005.06.29
申请号 EP20030730646 申请日期 2003.05.27
申请人 AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 NAGAHARA, T.;MATSUO, H.
分类号 C08G77/54;C08G77/62;G03F7/004;G03F7/039;G03F7/075;H01L21/027;H01L21/312;(IPC1-7):G03F7/075 主分类号 C08G77/54
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