RINSING AFTER CHEMICAL-MECHANICAL PLANARIZATION PROCESS APPLIED ON A WAFER

摘要

A wafer having a non-metallic surface material containing at least partly silicon is planarized by progressively introducing a rinsing solution on the wafer surface so that the chemical attack of the polishing of the wafer surface is controllably stopped before going beyond a desired planarization. Chemical-mechanical planarization on a wafer having a non-metallic surface material containing at least partly silicon, involves polishing the wafer surface using a polishing plate together with a polishing solution comprising a chemical agent for chemical attacking the surface and abrasive particles for mechanically attacking the surface; rinsing resulting residues; and final cleaning. The rinsing solution is progressively introduced on the wafer surface so that the chemical attack of the polishing step is controllably stopped before going beyond a desired planarization.