发明名称 |
FIELD-EFFECT TRANSISTOR |
摘要 |
<p>The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba-Mn oxide showing ferromagnetism at 0 DEG C or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0 DEG C or higher. <IMAGE></p> |
申请公布号 |
EP1548843(A1) |
申请公布日期 |
2005.06.29 |
申请号 |
EP20030794228 |
申请日期 |
2003.09.04 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
TANAKA, HIDEKAZU;KAWAI, TOMOJI;KANKI, TERUO;PARK, YOUNG-GEUN |
分类号 |
H01L29/49;H01L29/786;H01L29/82;(IPC1-7):H01L29/82;H01L29/78 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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