发明名称 Metal-oxide-semiconductor device having integrated bias circuit
摘要 <p>An IC device includes an MOS device having a gate terminal, a source terminal and a drain terminal, the gate terminal being operatively coupled to an input of the IC device, the drain terminal being operatively coupled to an output of the IC device, and the source terminal being coupled to a negative voltage supply. The IC device further includes a bias generator operatively coupled to the gate terminal of the MOS device, the bias generator generating a bias voltage and/or a bias current for biasing the MOS device at a substantially constant quiescent operating point. The bias generator is configured such that the bias voltage and/or bias current varies as a function of a junction temperature of the MOS device. In this manner, the bias generator accurately tracks one or more operating conditions of the MOS device, thereby improving the performance of the device. <IMAGE></p>
申请公布号 EP1548536(A1) 申请公布日期 2005.06.29
申请号 EP20040256760 申请日期 2004.11.02
申请人 AGERE SYSTEMS INC. 发明人 LOPEZ, OSVALDO;LOTT, JOEL MORRISON
分类号 H01L21/822;H03F1/30;G05F3/20;H01L27/04;H03F3/195;(IPC1-7):G05F3/20 主分类号 H01L21/822
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