METHOD FOR ISOLATION USED ION IMPLANT,申请号KR20030096908-传众专利搜索

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发明名称	METHOD FOR ISOLATION USED ION IMPLANT
摘要
申请公布号	KR20050065140(A)	申请公布日期	2005.06.29
申请号	KR20030096908	申请日期	2003.12.24
申请人	MAGNACHIP SEMICONDUCTOR, LTD.	发明人	KIM, JIN KWAN
分类号	H01L21/762;(IPC1-7):H01L21/762	主分类号	H01L21/762
代理机构		代理人
主权项
地址

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