发明名称 |
MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE |
摘要 |
Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure having a p-type half-metallic ferromagnetic semiconductor, an n-type half-metallic ferromagnetic semiconductor and at least one atomic layer of nonmagnetic insulator interposed therebetween, or a rectification effect derived from a p-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure devoid of the interposed atomic layer of nonmagnetic insulator. <IMAGE> |
申请公布号 |
EP1548832(A1) |
申请公布日期 |
2005.06.29 |
申请号 |
EP20030733382 |
申请日期 |
2003.06.11 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
YOSHIDA, HIROSHI;SATO, KAZUNORI |
分类号 |
G11C11/15;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;H01L43/12 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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