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发明名称
A METHOD FOR FORMING A CAPACITOR OF A SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20050064895(A)
申请公布日期
2005.06.29
申请号
KR20030096505
申请日期
2003.12.24
申请人
HYNIX SEMICONDUCTOR INC.
发明人
KANG, CHUN SOO
分类号
H01L27/108;(IPC1-7):H01L27/108
主分类号
H01L27/108
代理机构
代理人
主权项
地址
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