| 发明名称 |
Thermally-assisted magnetic memory structures |
| 摘要 |
An exemplary thermally-assisted magnetic memory structure comprises a first conductor substantially surrounded by a cladding, a memory cell being thermally isolated from the first conductor by a thermally resistive region, and a second conductor electrically contacting the memory cell.
|
| 申请公布号 |
US6911685(B2) |
申请公布日期 |
2005.06.28 |
| 申请号 |
US20030683326 |
申请日期 |
2003.10.10 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
ANTHONY THOMAS C.;BHATTACHARYYA MAN K.;WOLMSLEY ROBERT G. |
| 分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
