发明名称 |
Semiconductor device having a thin fin and raised source/drain areas |
摘要 |
A double-gate semiconductor device includes a substrate, an insulating layer, a fin, source and drain regions and a gate. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The source region is formed on the insulating layer adjacent a first side of the fin and the drain region is formed on the second side of the fin opposite the first side. The source and drain regions have a greater thickness than the fin in the channel region of the semiconductor device.
|
申请公布号 |
US6911697(B1) |
申请公布日期 |
2005.06.28 |
申请号 |
US20030632965 |
申请日期 |
2003.08.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG HAIHONG;AN JUDY XILIN;YU BIN |
分类号 |
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L27/01;H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|