发明名称 Method of making borderless contacts in an integrated circuit
摘要 According to one embodiment ( 100 ), a method of forming borderless contacts may include forming a composite layer over a first insulating layer ( 102 ). A contact hole may be formed through a composite layer and a first insulating layer ( 104 ). A conducting layer may then be formed ( 106 ), including within a contact hole. Portions of a conducting layer may then be removed with a composite layer as a polish stop ( 108 ), and a contact structure may be formed. A first interconnect structure and a second insulating layer may then be formed over a first insulating layer ( 110 and 112 ). A borderless contact pattern may then be etched with a composite layer as an etch stop ( 114 ).
申请公布号 US6911395(B1) 申请公布日期 2005.06.28
申请号 US20000668604 申请日期 2000.09.22
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 QIAO JIAMIN;BEN-TZUR MIRA;GOPALAN PRABHURAM
分类号 H01L21/302;H01L21/60;(IPC1-7):H01L21/302 主分类号 H01L21/302
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