发明名称 |
Method of making borderless contacts in an integrated circuit |
摘要 |
According to one embodiment ( 100 ), a method of forming borderless contacts may include forming a composite layer over a first insulating layer ( 102 ). A contact hole may be formed through a composite layer and a first insulating layer ( 104 ). A conducting layer may then be formed ( 106 ), including within a contact hole. Portions of a conducting layer may then be removed with a composite layer as a polish stop ( 108 ), and a contact structure may be formed. A first interconnect structure and a second insulating layer may then be formed over a first insulating layer ( 110 and 112 ). A borderless contact pattern may then be etched with a composite layer as an etch stop ( 114 ).
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申请公布号 |
US6911395(B1) |
申请公布日期 |
2005.06.28 |
申请号 |
US20000668604 |
申请日期 |
2000.09.22 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
QIAO JIAMIN;BEN-TZUR MIRA;GOPALAN PRABHURAM |
分类号 |
H01L21/302;H01L21/60;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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