发明名称 |
Facing-targets-type sputtering apparatus and method |
摘要 |
Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.
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申请公布号 |
US6911123(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20010998235 |
申请日期 |
2001.12.03 |
申请人 |
FTS CORPORATION |
发明人 |
KADOKURA SADAO |
分类号 |
C23C14/34;C23C14/35;H01J37/34;H01L21/28;H01L21/285;(IPC1-7):C23C14/35 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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