发明名称 |
Flash memory device having poly spacers |
摘要 |
A non-volatile memory device includes a substrate having a first active region and a second active region. A first floating gate is provided over the first active region and having an edge, the first floating gate being made of a conductive material. A first spacer is connected to the edge of the first floating gate and being made of the same conductive material as that of the first floating gate. A control gate is provided proximate to the floating gate.
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申请公布号 |
US6911370(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20030431172 |
申请日期 |
2003.05.06 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
WANG HSINGYA ARTHUR;CHOU KAI-CHENG;RABKIN PETER |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/331;H01L21/822 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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