发明名称 |
Magnetic semiconductor memory and the reading method using spin-polarized electron beam |
摘要 |
A system for writing data to and reading data from a magnetic semiconductor memory utilizing a spin polarized electron beam. The magnetic semiconductor memory comprises a plurality of storage locations, each storage location includes a magnetic material and a layer of semiconductor material capable of emitting photons. The method of reading data from the magnetic semiconductor memory comprising steps of directing a spin-polarized electron beam at the magnetic semiconductor memory, and detecting the light emission state of the semiconductor layer from the magnetic semiconductor memory.
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申请公布号 |
US6912148(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20030624406 |
申请日期 |
2003.07.21 |
申请人 |
INTEL CORPORATION |
发明人 |
HANNAH ERIC C.;BROWN MICHAEL A. |
分类号 |
G11C11/14;G11C13/00;(IPC1-7):G11C13/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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