发明名称 |
Methods for fabricating MRAM device structures |
摘要 |
A method for fabricating a magnetic memory element structure comprises providing a dielectric layer having a conducting via. A first magnetic layer is formed overlying the dielectric layer and is in electrical communication with the conducting via. A non-magnetic layer and a second magnetic layer are formed overlying the first magnetic layer. A first conductive layer is deposited overlying the second magnetic layer and is patterned. A portion of the second magnetic layer is exposed and is transformed to form an inactive portion and an active portion. The active portion comprises a portion of a memory element and the inactive portion comprises an insulator. A sidewall spacer is formed about at least one sidewall of the first conductive layer and a masking tab is formed that overlies a portion of the memory element and extends to overlie at least a portion of the conducting via.
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申请公布号 |
US6911156(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20030417537 |
申请日期 |
2003.04.16 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GRYNKEWICH GREGORY W.;BUTCHER BRIAN R.;DURLAM MARK A.;KYLER KELLY;SMITH KENNETH H.;TRACY CLARENCE J. |
分类号 |
G11B5/127;G11C11/16;H01L21/00;H01L43/12;H04R31/00;H05K3/02;(IPC1-7):H01L21/00 |
主分类号 |
G11B5/127 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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