发明名称 |
Polymer thin-film transistor with contact etch stops |
摘要 |
A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.
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申请公布号 |
US6911354(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20030681464 |
申请日期 |
2003.10.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BREEN TRICIA L.;CLEVENGER LAWRENCE A.;HSU LOUIS L.;WANG LI-KONG;WONG KWONG HON |
分类号 |
H01L21/00;H01L29/786;H01L51/40;(IPC1-7):H01L51/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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