| 摘要 |
A magnetic random access memory includes a memory cell array having memory cells using a magnetoresistive effect, a first functional line which runs in a first direction in the memory cell array and is commonly connected without an intervening select switch to one terminal of each of the memory cells, second functional lines which are arranged in correspondence with the memory cells and run in a second direction perpendicular to the first direction in the memory cell array, each second functional line being connected without an intervening select switch to a corresponding memory cell, and a third functional line which is electrically insulated from the memory cells and generates a magnetic field to write data in the memory cells such that the magnetic field is shared by the memory cells. |
