| 摘要 |
We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick Ta<SUB>N </SUB>seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the Ta<SUB>N </SUB>seed layer. Further, the Ta<SUB>N </SUB>seed layer exhibits low resistivity, in the range of 30 muOmega m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the Ta<SUB>N </SUB>seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the Ta<SUB>N </SUB>seed layer.
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