发明名称 |
Flash memory cell, flash memory cell array and manufacturing method thereof |
摘要 |
A flash memory cell array comprises a substrate, a string of memory cell structures and source region/drain region. Each of memory cell structures includes a stack gate structure including a select gate dielectric layer, a select gate and a gate cap layer formed on the substrate; a spacer is set on the sidewall of the select gate; a control gate connected to the stack gate structure is set on the one side of the stack gate structure; a floating gate is set between the control gate and the substrate; an inter-gate dielectric layer is set between the control gate and the floating gate; and a tunneling dielectric layer is set between the floating gate and the substrate. The source region/drain region is set in the substrate near outer control gate and stack gate structure of the flash memory cell array.
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申请公布号 |
US6911690(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20030604819 |
申请日期 |
2003.08.19 |
申请人 |
POWERSHIP SEMICONDUCTOR CORP. |
发明人 |
HSU CHENG-YUAN;HUNG CHIH-WEI;WU CHI-SHAN;HUANG MIN-SAN |
分类号 |
G11C16/04;H01L21/28;H01L21/336;H01L21/8238;H01L29/423;H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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