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发明名称
METHOD FOR SMOOTHING INTER-METAL DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE
摘要
申请公布号
KR100497206(B1)
申请公布日期
2005.06.28
申请号
KR20020083418
申请日期
2002.12.24
申请人
发明人
分类号
H01L21/31;(IPC1-7):H01L21/31
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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