发明名称 Method of collecting impurities on surface of semiconductor wafer
摘要 A method of collecting impurities existing on the surface of a semiconductor wafer and in a thin film formed on the semiconductor wafer is provided with a process for dripping collecting liquid on the surface of the semiconductor wafer to which hydrophobic processing is applied, a process for elongating the collecting liquid dripped and turned spherical by surface tension in a direction of the radius of the semiconductor wafer with the surface tension kept, a process for relatively rolling and scanning the elongated collecting liquid, touching the collecting liquid to the surface of the semiconductor wafer and incorporating impurities into the collecting liquid, a process for restoring the elongated collecting liquid to the original spherical shape after the impurities are incorporated and a process for withdrawing the collecting liquid restored to the spherical shape from the surface of the semiconductor wafer.
申请公布号 US6911096(B2) 申请公布日期 2005.06.28
申请号 US20020288768 申请日期 2002.11.06
申请人 NEC ELECTRONICS CORPORATION 发明人 WATANABE KAORI
分类号 H01L21/66;B08B3/04;B08B7/00;C23G1/36;C25F1/00;H01L21/00;H01L21/02;(IPC1-7):C23G1/36 主分类号 H01L21/66
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