| 摘要 |
For example, a surface emitting semiconductor laser and a driver IC are arranged three-dimensionally to put a submounting substrate between them, and LSIs such as a CPU, etc. are mounted on the driver IC. The surface emitting semiconductor laser is formed of the epitaxial lift-off (ELO) process and has a thickness of about 10 mum. A through hole is provided to all the submounting substrate, the surface emitting semiconductor laser, the driver IC, and the LSIs. These parts are connected electrically mutually via conductor in the through hole.
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