| 摘要 |
A silicon rod is doped with boron by forming a longitudinal slit in the rod, introducing a mixture of boron powder having a particle size of 5-500m and water glass into the slit, heating the rod to 900 DEG C. for 3 hrs. to remove free and combined water, passing a molten zone through the rod, removing the resulting surface slag by scraping, and passing one or more molten zones through the rod, preferably in the absence of a crucible. The boron particle size is preferably 50-100m . A monocrystalline rod may be produced using a seed crystal, during the passage of the second molten zone. The resistivity of the silicon may be reduced from 500 to 4 X 10-3 ohm-cm. Specification 919,837 is referred to.
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