发明名称 |
РЕГУЛИРОВАНИЕ КОНТАКТНОГО СОПРОТИВЛЕНИЯ В УСТРОЙСТВАХ С ПЕРЕМЕШАННЫМИ КВАНТОВЫМИ ЯМАМИ |
摘要 |
A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region. |
申请公布号 |
RU2004137805(A) |
申请公布日期 |
2005.06.27 |
申请号 |
RU20040137805 |
申请日期 |
2003.05.21 |
申请人 |
ИНТЕНС ФОУТОНИКС ЛИМИТЕД (GB) |
发明人 |
НАДЖДА Стивен (GB);МакДУГОЛ Стюарт Данкан (GB);ЛИУ Ксуефенг (GB) |
分类号 |
H01L21/00;H01L21/18;H01L33/00;H01S5/34;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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