| 发明名称 |
Bonding of two plates of semiconductor materials with the formation of an ohmic contact between the two plates |
| 摘要 |
<p>Bonding of two plates (2, 12) of semiconductor materials, comprises: (a) implantation of metal species (4) in at least the first plate; (b) assembly of the first and second plates, by molecular adherence; (c) formation of metal compounds, alloyed between the implanted metal species and the semiconductor materials of the two plates. An independent claim is also claimed for the structure obtained by this method.</p> |
| 申请公布号 |
FR2864336(A1) |
申请公布日期 |
2005.06.24 |
| 申请号 |
FR20030051190 |
申请日期 |
2003.12.23 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
POCAS STEPHANE;MORICEAU HUBERT;MICHAUD JEAN FRANCOIS |
| 分类号 |
H01L21/18;H01L21/265;H01L21/266;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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