Semiconductor component incorporating some zones of high concentration of atoms of a metal such as platinum or gold, notably to produce a rapid diode

摘要

Structure formed in a semiconductor substrate (10) incorporates at least one zone (11) having an elevated concentration of atoms of a metal such as platinum or gold. This zone is surrounded by at least a first trench (T1,T2,T3,T4) penetrating into the substrate. An independent claim is also included for the formation of this zone in a semiconductor substrate.