发明名称 APPARATUS AND METHOD FOR ANALYZING CHARACTERISTIC OF MAGNETIC RAM
摘要 PROBLEM TO BE SOLVED: To provide an MRAM characteristic analyzing apparatus and method which can analyze characteristics of respective unit cells of an MRAM array with a relatively simple configuration within a short period of time. SOLUTION: The MRAM characteristic analyzing apparatus includes: an MRAM placing section on which an MRAM is to be mounted; a magnetic field applying section which is formed around the MRAM placing section and is used to apply external magnetic field to the MRAM mounted on the MRAM placing section, a probe card which is formed on the top of the place corresponding to the MRAM placing section; a matrix switch which is used to specify an MRAM unit cell; a source measurement unit which is used to apply internal magnetic field to the MRAM unit cell or is used to measure a resistive value of the unit cell; and an analysis unit which is used to store information related to the resistive values of the MRAM unit cells measured and to analyze the information. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166243(A) 申请公布日期 2005.06.23
申请号 JP20040339098 申请日期 2004.11.24
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK WON-JUN;HWANG IN-JUN;KIM TAE-WAN
分类号 G01N27/72;G01N27/00;G01N27/04;G11C11/15;G11C11/16;G11C29/44;G11C29/50;G11C29/56;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):G11C29/00 主分类号 G01N27/72
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