发明名称 |
APPARATUS AND METHOD FOR ANALYZING CHARACTERISTIC OF MAGNETIC RAM |
摘要 |
PROBLEM TO BE SOLVED: To provide an MRAM characteristic analyzing apparatus and method which can analyze characteristics of respective unit cells of an MRAM array with a relatively simple configuration within a short period of time. SOLUTION: The MRAM characteristic analyzing apparatus includes: an MRAM placing section on which an MRAM is to be mounted; a magnetic field applying section which is formed around the MRAM placing section and is used to apply external magnetic field to the MRAM mounted on the MRAM placing section, a probe card which is formed on the top of the place corresponding to the MRAM placing section; a matrix switch which is used to specify an MRAM unit cell; a source measurement unit which is used to apply internal magnetic field to the MRAM unit cell or is used to measure a resistive value of the unit cell; and an analysis unit which is used to store information related to the resistive values of the MRAM unit cells measured and to analyze the information. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2005166243(A) |
申请公布日期 |
2005.06.23 |
申请号 |
JP20040339098 |
申请日期 |
2004.11.24 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK WON-JUN;HWANG IN-JUN;KIM TAE-WAN |
分类号 |
G01N27/72;G01N27/00;G01N27/04;G11C11/15;G11C11/16;G11C29/44;G11C29/50;G11C29/56;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):G11C29/00 |
主分类号 |
G01N27/72 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|