发明名称 |
PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC |
摘要 |
The dimensional changes of patterns formed from polysilsesquiazane- based photosensitive compositions containing a photo-acid generator are prevented. Provided is a photosensitive composition characterized by comprising: a modified polysilsesquiazane which has basic structural units represented by the general formula -[SiR1(NR2) 1.5]- (wherein R1's each independently represents C1- 3 alkyl or (un)substituted phenyl; and R2's each independently represents hydrogen, C1-3 alkyl, or (un)substituted phenyl), up to 50 mol% of the basic structural units being substituted by groups other than silazane bonds, and has a weight-average molecular weight of 500 to 200,000; a photo-acid generator; and a basic substance. |
申请公布号 |
KR20050062539(A) |
申请公布日期 |
2005.06.23 |
申请号 |
KR20057002737 |
申请日期 |
2005.02.18 |
申请人 |
AZ ELECTRONIC MATERIALS (JAPAN) K.K. |
发明人 |
NAGAHARA TATSURO;MATSUO HIDEKI |
分类号 |
C08G77/54;C08L83/16;G03F7/004;G03F7/039;G03F7/075;H01B3/30;H01B3/46;H01L21/027;H01L21/312;(IPC1-7):G03F7/075 |
主分类号 |
C08G77/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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