发明名称 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC
摘要 The dimensional changes of patterns formed from polysilsesquiazane- based photosensitive compositions containing a photo-acid generator are prevented. Provided is a photosensitive composition characterized by comprising: a modified polysilsesquiazane which has basic structural units represented by the general formula -[SiR1(NR2) 1.5]- (wherein R1's each independently represents C1- 3 alkyl or (un)substituted phenyl; and R2's each independently represents hydrogen, C1-3 alkyl, or (un)substituted phenyl), up to 50 mol% of the basic structural units being substituted by groups other than silazane bonds, and has a weight-average molecular weight of 500 to 200,000; a photo-acid generator; and a basic substance.
申请公布号 KR20050062539(A) 申请公布日期 2005.06.23
申请号 KR20057002737 申请日期 2005.02.18
申请人 AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 NAGAHARA TATSURO;MATSUO HIDEKI
分类号 C08G77/54;C08L83/16;G03F7/004;G03F7/039;G03F7/075;H01B3/30;H01B3/46;H01L21/027;H01L21/312;(IPC1-7):G03F7/075 主分类号 C08G77/54
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