| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor-device element, which prevents electrical short between lower electrodes caused by their tilting and lifting in forming the capacitor lower electrodes and can widen effective capacitor area to assure sufficient electrical-charge storage capacity. <P>SOLUTION: A mask for forming the lower electrode of the capacitor is changed from a conventional hole-shaped one to an island-shaped one, and an etch-stop film formed on the upper part of a storage-node contact plug is used for a part of the lower electrode of the capacitor as an electrically conductive substance. Therefore, in forming the lower electrode of a cylinder type, the shape of the lower electrode is changed from a conventional jar-like shape formed by plasma-etching nature to a shape close to a perpendicularly etched one, resulting to prevent the occurrence of a bridge between the lower electrodes caused by the tilting. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
