| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device high in resistance to surge current breakdown by avoiding the concentration of a current at a point where a wire joins electrodes formed on the semiconductor element surface. <P>SOLUTION: In this semiconductor device, one metal wire is connected to semiconductor element surface electrodes at two or more locations, and the metal wire is linearly arranged between junctions along planes of the surface electrodes. In another example, one metal wire is connected to semiconductor element electrodes at one location. A junction length is 5-100 times a metal wire diameter, and the junction is linearly arranged along the planes of surface electrodes. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
