发明名称 METHOD FOR DOPING ORGANIC SEMICONDUCTOR WITH QUINONE DIIMINE DERIVATIVE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an organic dopant that is easily handled in the manufacturing process and is capable of fabricating organic semiconductors with high reproducibility. <P>SOLUTION: To dope organic semiconductor matrix materials and change the electrical properties, the organic dopant must be an organic mesomere compound which is quinone, quinone derivative, 1, 2, 3-Dioxaborin or 1, 3, 2-Dioxaborin derivative, and the volatility of the above organic mesomere compound must be lower than that of Tetrafuoro-Tetracyano quinonedi methane (F4TCNQ) under identical vaporization conditions. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005167175(A) 申请公布日期 2005.06.23
申请号 JP20040059625 申请日期 2004.03.03
申请人 NOVALED GMBH 发明人 KUEHL OLAF;HARTMANN HORST;ZEIKA OLAF;PFEIFFER MARTIN;YOUXUAN ZHENG
分类号 H01L51/50;A61K31/53;C07C251/22;C07D339/08;C07F5/04;C09K11/06;H01L21/04;H01L21/24;H01L29/786;H01L29/861;H01L31/00;H01L35/24;H01L51/00;H01L51/05;H01L51/30;H01L51/40;H01L51/54;H05B33/14;(IPC1-7):H01L51/00;H05B33/22 主分类号 H01L51/50
代理机构 代理人
主权项
地址