| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for a semiconductor base material improving the removal rate of a barrier layer and being capable of decreasing the removal rate of an insulator. <P>SOLUTION: The solution is available for removing a barrier material from the semiconductor base material. The solution contains an oxidizer of 0.01 to 25 wt.%, an inhibitor of 0 to 15 wt.% for a nonferrous metal, an abrasive grain of 0 to 15 wt.%, a complexing agent of 0 to 20 wt.% for the nonferrous metal, a barrier removal agent of 0.01 to 12 wt.%, and water as the residual. The barrier removal agent is selected from an imine derivative compound, a hydrazine derivative compound, and a group composed of these mixture. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
