| 摘要 |
PROBLEM TO BE SOLVED: To provide a driving method of a solid-state imaging element, capable of reducing a read voltage and increasing the amount of charge for handling a photosensor, and to provide a solid-state imaging device having the solid-state imaging element. SOLUTION: A p-type semiconductor region 14 is formed on the surface of an n-type charge storage region 13 at the photosensor, and the solid-state imaging element 10 that can apply a voltageϕV2 to the p-type semiconductor region 14 is driven so that the voltageϕV2 is applied to the p-type semiconductor region 14 in a read period for shallowing potential at the photosensor. Additionally, in the solid-state imaging device, there is a voltage application means for applying the voltageϕV2 to the solid-state imaging element 10 and the p-type semiconductor region 14, and the voltageϕV2 for shallowing the potential at the photosensor is applied to the p-type semiconductor region 14 from the voltage application means. COPYRIGHT: (C)2005,JPO&NCIPI
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