| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an improved polycrystalline thin-film semiconductor device at relatively low temperature. SOLUTION: A method for manufacturing a semiconductor device for using a semiconductor film formed on a substrate as an active layer comprises a process for depositing an amorphous semiconductor film by using a material gas containing high-order silane while deposition temperature is less than 430°C and a deposition speed is equal to or higher than 0.5 nm/min in a low-pressure chemical vapor phase deposition method, a process for forming a crystalline semiconductor film by crystallizing the amorphous semiconductor film in a solid phase, and a process for melting one portion of the crystalline semiconductor film. COPYRIGHT: (C)2005,JPO&NCIPI
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