| 摘要 |
PROBLEM TO BE SOLVED: To overcome an urgent problem wherein a structure and processes of a semiconductor element must be simplified with a shift to a large-sized substrate because at least two transistor type structures with TFTs for a driving are required for inhibiting the dispersion of on current of the TFT for a switching formed in a picture-element region, when a light-emitting element composed of an organic compound or an inorganic compound is driven by the thin-film transistor (TFT). SOLUTION: A source region and a drain region are formed, a section as a channel region is coated with an insulating film functioning as a channel protective film and an insular semiconductor film is formed. Consequently, a resist mask need not be formed, and the semiconductor element is manufactured only by a metal mask, thus simplifying the processes. COPYRIGHT: (C)2005,JPO&NCIPI
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