| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor in which an organic semiconductor layer is installed in a channel layer and transistor characteristics such as drain current, an on/off ratio and threshold voltage are improved. SOLUTION: The field effect transistor is provided with a gate electrode, a source electrode, a drain electrode and the organic semiconductor layer arranged in a channel region formed between the source electrode and the drain electrode. The organic semiconductor layer is a thin film having a film face in a plane direction connecting the source electrode and the drain electrode. The gate electrode is arranged to cover the organic semiconductor layer from at least two directions. COPYRIGHT: (C)2005,JPO&NCIPI
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