| 发明名称 |
Method of making a non-volatile memory using a plasma oxidized high-k charge-trapping layer |
| 摘要 |
A method of fabricating a non-volatile memory device includes preparing a substrate; depositing a layer of HfO<SUB>2 </SUB>by atomic layer deposition; annealing the substrate and HfO<SUB>2 </SUB>layer in situ; exposing the HfO<SUB>2 </SUB>layer to a plasma discharge, thereby forming a charge-trapping layer; depositing a gate structure; and completing the memory device.
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| 申请公布号 |
US2005136586(A1) |
申请公布日期 |
2005.06.23 |
| 申请号 |
US20030741802 |
申请日期 |
2003.12.18 |
| 申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
ONO YOSHI |
| 分类号 |
H01L21/8234;H01L21/28;H01L21/316;H01L21/336;H01L21/8246;H01L21/8247;H01L27/088;H01L27/105;H01L27/115;H01L29/788;H01L29/792;H01L31/062;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8234 |
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