发明名称 |
Method for forming contact hole |
摘要 |
Disclosed is an improved method for forming contact holes. The method of the present invention comprises the steps of providing a substrate; forming a plurality of operation layers on the substrate as necessary; forming a poly-silicon layer on the uppermost one of the operation layers; forming an anti-reflective layer on the poly-silicon layer; forming a photoresist layer on the anti-reflective layer to define the positions where the contact holes are to be formed; removing portions of the anti-reflective layer not covered with the photoresist layer; removing the photoresist layer; removing portions of the poly-silicon layer not covered with the anti-reflective layer; and using the residual poly-silicon layer as a mask to etch and form the contact holes. In the step of removing portions of the poly-silicon layer comprises partially removing portions of the poly-silicon not covered with the anti-reflective layer to form recesses, removing the anti-reflective layer, and opening the recesses of the poly-silicon to form openings
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申请公布号 |
US2005136674(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20030740680 |
申请日期 |
2003.12.22 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HUANG TSE-YAO;CHEN YI-NAN |
分类号 |
H01L21/311;H01L21/4763;H01L21/768;H01L21/8242;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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