发明名称 |
Single substrate annealing of magnetoresistive structure |
摘要 |
A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.
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申请公布号 |
US2005133118(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20050060794 |
申请日期 |
2005.02.18 |
申请人 |
TUTTLE MARK E.;WEIMER RONALD A. |
发明人 |
TUTTLE MARK E.;WEIMER RONALD A. |
分类号 |
H01F41/30;(IPC1-7):H01F1/00;C21D1/04;G11B5/33 |
主分类号 |
H01F41/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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